RDR005N25

Properties at a glance

  • Cd
    10
    pF
  • CntlChType
    N
    channel
  • FETType
    MOSFET
  • Id
    0.5
    A
  • Pd
    1
    W
  • Qg
    3.5
    Nc
  • Rds
    8.8
    Ω
  • Tj
    150
    °C
  • tr
    10
    ns
  • Vds
    250
    V
  • Vgs
    20
    V
  • Vgs(th)
    3
    V

Find similar components to the RDR005N25 by clicking the properties (above) that you want to match.

Component Package & Description

Part number RDR005N25 is reportedly available in a SC-96 package.

External Resources

Properties and Attributes

Drain-Source Capacitance Cd
10 pF
Type of Control Channel CntlChType
N channel
FET Type FETType
MOSFET
Maximum Drain Current Id
0.5 A
Maximum Power Dissipation Pd
1 W
Total Gate Charge Qg
3.5 Nc
Maximum Drain-Source on-State Resistance Rds
8.8 Ω
Maximum Junction Temperature Tj
150 °C
Rise Time tr
10 ns
Maximum Drain-Source Voltage Vds
250 V
Maximum Gate-Source Voltage Vgs
20 V
Maximum Gate-Threshold Voltage Vgs(th)
3 V