NVMFS4C302N

Properties at a glance

  • Cd
    2320
    pF
  • CntlChType
    N
    channel
  • FETType
    MOSFET
  • Id
    241
    A
  • Pd
    115
    W
  • Qg
    37
    Nc
  • Rds
    0.0015
    Ω
  • Tj
    175
    °C
  • tr
    18
    ns
  • Vds
    30
    V
  • Vgs
    20
    V
  • Vgs(th)
    2.2
    V

Find similar components to the NVMFS4C302N by clicking the properties (above) that you want to match.

Component Package & Description

Part number NVMFS4C302N is reportedly available in a SO8FL package.

External Resources

Properties and Attributes

Drain-Source Capacitance Cd
2320 pF
Type of Control Channel CntlChType
N channel
FET Type FETType
MOSFET
Maximum Drain Current Id
241 A
Maximum Power Dissipation Pd
115 W
Total Gate Charge Qg
37 Nc
Maximum Drain-Source on-State Resistance Rds
0.0015 Ω
Maximum Junction Temperature Tj
175 °C
Rise Time tr
18 ns
Maximum Drain-Source Voltage Vds
30 V
Maximum Gate-Source Voltage Vgs
20 V
Maximum Gate-Threshold Voltage Vgs(th)
2.2 V