1DI200Z-100

Properties at a glance

  • hFE
    100
    β
  • Ic
    200
    A
  • Pc
    1400
    W
  • Pol
    NPN
  • Tj
    150
    °C
  • TranMat
    Si
  • Vcb
    1000
    V
  • Vce
    1000
    V
  • Veb
    10
    V

Find similar components to the 1DI200Z-100 by clicking the properties (above) that you want to match.

Component Package & Description

Part number 1DI200Z-100 is reportedly available in a M106 package.

External Resources

Properties and Attributes

Forward Current Transfer Ratio hFE
100 β
Maximum Collector Current Ic
200 A
Maximum Power Dissipation Pc
1400 W
Polarity Pol
NPN
Maximum Junction Temperature Tj
150 °C
Material of Transistor TranMat
Si
Maximum Collector-Base Voltage Vcb
1000 V
Maximum Collector-Emitter Voltage Vce
1000 V
Maximum Emitter-Base Voltage Veb
10 V