MMBT5089

Properties at a glance

  • Cc
    4
    pF
  • ft
    50
    MHz
  • hFE
    400
    β
  • Ic
    0.05
    A
  • Pc
    0.3
    W
  • Pol
    NPN
  • Tj
    125
    °C
  • TranMat
    Si
  • Vcb
    30
    V
  • Vce
    25
    V
  • Veb
    4
    V

Find similar components to the MMBT5089 by clicking the properties (above) that you want to match.

Component Package & Description

Part number MMBT5089 is reportedly available in a TO-236 package.

External Resources

Properties and Attributes

Collector Capacity Cc
4 pF
Transition Frequency ft
50 MHz
Forward Current Transfer Ratio hFE
400 β
Maximum Collector Current Ic
0.05 A
Maximum Power Dissipation Pc
0.3 W
Polarity Pol
NPN
Maximum Junction Temperature Tj
125 °C
Material of Transistor TranMat
Si
Maximum Collector-Base Voltage Vcb
30 V
Maximum Collector-Emitter Voltage Vce
25 V
Maximum Emitter-Base Voltage Veb
4 V