SIF5N65F

Properties at a glance

  • Cd
    63
    pF
  • CntlChType
    N
    channel
  • FETType
    MOSFET
  • Id
    5
    A
  • Pd
    50
    W
  • Qg
    15.6
    Nc
  • Rds
    20
    Ω
  • Tj
    150
    °C
  • Vds
    650
    V
  • Vgs
    30
    V
  • Vgs(th)
    4
    V

Find similar components to the SIF5N65F by clicking the properties (above) that you want to match.

Component Package & Description

Part number SIF5N65F is reportedly available in TO-251, TO-251S, TO-252, or TO-252T packages.

External Resources

Properties and Attributes

Drain-Source Capacitance Cd
63 pF
Type of Control Channel CntlChType
N channel
FET Type FETType
MOSFET
Maximum Drain Current Id
5 A
Maximum Power Dissipation Pd
50 W
Total Gate Charge Qg
15.6 Nc
Maximum Drain-Source on-State Resistance Rds
20 Ω
Maximum Junction Temperature Tj
150 °C
Maximum Drain-Source Voltage Vds
650 V
Maximum Gate-Source Voltage Vgs
30 V
Maximum Gate-Threshold Voltage Vgs(th)
4 V