2N5530

Properties at a glance

  • ft
    200
    MHz
  • hFE
    40
    β
  • Ic
    10
    A
  • Pc
    35
    W
  • Pol
    NPN
  • Tj
    200
    °C
  • TranMat
    Si
  • Vcb
    60
    V
  • Vce
    40
    V
  • Veb
    3
    V

Find similar components to the 2N5530 by clicking the properties (above) that you want to match.

Component Package & Description

Part number 2N5530 is reportedly available in a TO-61 package.

External Resources

Properties and Attributes

Transition Frequency ft
200 MHz
Forward Current Transfer Ratio hFE
40 β
Maximum Collector Current Ic
10 A
Maximum Power Dissipation Pc
35 W
Polarity Pol
NPN
Maximum Junction Temperature Tj
200 °C
Material of Transistor TranMat
Si
Maximum Collector-Base Voltage Vcb
60 V
Maximum Collector-Emitter Voltage Vce
40 V
Maximum Emitter-Base Voltage Veb
3 V