ED8050C

Properties at a glance

  • Cc
    1.7
    pF
  • ft
    100
    MHz
  • hFE
    120
    β
  • Ic
    1.5
    A
  • Pc
    0.3
    W
  • Pol
    NPN
  • Tj
    150
    °C
  • TranMat
    Si
  • Vcb
    30
    V
  • Vce
    20
    V
  • Veb
    5
    V

Find similar components to the ED8050C by clicking the properties (above) that you want to match.

Component Package & Description

Part number ED8050C is reportedly available in a TO-92 package.

External Resources

Properties and Attributes

Collector Capacity Cc
1.7 pF
Transition Frequency ft
100 MHz
Forward Current Transfer Ratio hFE
120 β
Maximum Collector Current Ic
1.5 A
Maximum Power Dissipation Pc
0.3 W
Polarity Pol
NPN
Maximum Junction Temperature Tj
150 °C
Material of Transistor TranMat
Si
Maximum Collector-Base Voltage Vcb
30 V
Maximum Collector-Emitter Voltage Vce
20 V
Maximum Emitter-Base Voltage Veb
5 V