HN3A51F

Properties at a glance

  • Cc
    4
    pF
  • ft
    100
    MHz
  • hFE
    200
    β
  • Ic
    0.1
    A
  • Pc
    0.3
    W
  • Pol
    PNP
  • Tj
    150
    °C
  • TranMat
    Si
  • Vcb
    120
    V
  • Vce
    120
    V
  • Veb
    5
    V

Find similar components to the HN3A51F by clicking the properties (above) that you want to match.

Component Package & Description

Part number HN3A51F is reportedly available in a SM6 package.

External Resources

Properties and Attributes

Collector Capacity Cc
4 pF
Transition Frequency ft
100 MHz
Forward Current Transfer Ratio hFE
200 β
Maximum Collector Current Ic
0.1 A
Maximum Power Dissipation Pc
0.3 W
Polarity Pol
PNP
Maximum Junction Temperature Tj
150 °C
Material of Transistor TranMat
Si
Maximum Collector-Base Voltage Vcb
120 V
Maximum Collector-Emitter Voltage Vce
120 V
Maximum Emitter-Base Voltage Veb
5 V