P5506BDG

Properties at a glance

  • Cd
    80
    pF
  • CntlChType
    N
    channel
  • FETType
    MOSFET
  • Id
    22
    A
  • Pd
    50
    W
  • Qg
    12.5
    Nc
  • Rds
    0.055
    Ω
  • Tj
    150
    °C
  • tr
    8
    ns
  • Vds
    60
    V
  • Vgs
    20
    V
  • Vgs(th)
    2.5
    V

Find similar components to the P5506BDG by clicking the properties (above) that you want to match.

Component Package & Description

Part number P5506BDG is reportedly available in a TO-252 package.

External Resources

Properties and Attributes

Drain-Source Capacitance Cd
80 pF
Type of Control Channel CntlChType
N channel
FET Type FETType
MOSFET
Maximum Drain Current Id
22 A
Maximum Power Dissipation Pd
50 W
Total Gate Charge Qg
12.5 Nc
Maximum Drain-Source on-State Resistance Rds
0.055 Ω
Maximum Junction Temperature Tj
150 °C
Rise Time tr
8 ns
Maximum Drain-Source Voltage Vds
60 V
Maximum Gate-Source Voltage Vgs
20 V
Maximum Gate-Threshold Voltage Vgs(th)
2.5 V