1HN04CH

Properties at a glance

  • Cd
    3.1
    pF
  • CntlChType
    N
    channel
  • FETType
    MOSFET
  • Id
    0.27
    A
  • Pd
    0.6
    W
  • Qg
    0.9
    Nc
  • Rds
    80
    Ω
  • Tj
    150
    °C
  • tr
    7.4
    ns
  • Vds
    100
    V
  • Vgs
    20
    V
  • Vgs(th)
    2.6
    V

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Component Package & Description

Part number 1HN04CH is reportedly available in a SOT-23 package.

External Resources

Properties and Attributes

Drain-Source Capacitance Cd
3.1 pF
Type of Control Channel CntlChType
N channel
FET Type FETType
MOSFET
Maximum Drain Current Id
0.27 A
Maximum Power Dissipation Pd
0.6 W
Total Gate Charge Qg
0.9 Nc
Maximum Drain-Source on-State Resistance Rds
80 Ω
Maximum Junction Temperature Tj
150 °C
Rise Time tr
7.4 ns
Maximum Drain-Source Voltage Vds
100 V
Maximum Gate-Source Voltage Vgs
20 V
Maximum Gate-Threshold Voltage Vgs(th)
2.6 V