2N3209

Properties at a glance

  • Cc
    5
    pF
  • ft
    400
    MHz
  • hFE
    30
    β
  • Ic
    0.2
    A
  • Pc
    0.36
    W
  • Pol
    PNP
  • Tj
    175
    °C
  • TranMat
    Si
  • Vcb
    20
    V
  • Vce
    20
    V
  • Veb
    4
    V

Find similar components to the 2N3209 by clicking the properties (above) that you want to match.

Component Package & Description

Part number 2N3209 is reportedly available in a TO-18 package.

External Resources

Properties and Attributes

Collector Capacity Cc
5 pF
Transition Frequency ft
400 MHz
Forward Current Transfer Ratio hFE
30 β
Maximum Collector Current Ic
0.2 A
Maximum Power Dissipation Pc
0.36 W
Polarity Pol
PNP
Maximum Junction Temperature Tj
175 °C
Material of Transistor TranMat
Si
Maximum Collector-Base Voltage Vcb
20 V
Maximum Collector-Emitter Voltage Vce
20 V
Maximum Emitter-Base Voltage Veb
4 V