1MBI200N-120

Properties at a glance

  • Cc
    11600
    pF
  • Ic
    200
    A
  • IGBTChType
    N
    channel
  • Pc
    1500
    W
  • Tj
    125
    °C
  • tr
    250
    ns
  • Type
    IGBT
  • Vce
    1200
    V
  • VCE(sat)
    3.3
    V
  • Vge
    20
    V

Find similar components to the 1MBI200N-120 by clicking the properties (above) that you want to match.

Component Package & Description

Part number 1MBI200N-120 is reportedly available in a M127 package.

External Resources

Properties and Attributes

Collector Capacity Cc
11600 pF
Maximum Collector Current Ic
200 A
Type of IGBT Channel IGBTChType
N channel
Maximum Power Dissipation Pc
1500 W
Maximum Junction Temperature Tj
125 °C
Rise Time tr
250 ns
Component Type Type
IGBT
Maximum Collector-Emitter Voltage Vce
1200 V
Collector-Emitter Saturation Voltage (typical) VCE(sat)
3.3 V
Maximum Gate-Emitter Voltage Vge
20 V