1D500A-030

Properties at a glance

  • hFE
    500
    β
  • Ic
    500
    A
  • Pc
    2500
    W
  • Pol
    NPN
  • Tj
    150
    °C
  • TranMat
    Si
  • Vcb
    400
    V
  • Vce
    400
    V
  • Veb
    10
    V

Find similar components to the 1D500A-030 by clicking the properties (above) that you want to match.

Component Package & Description

Part number 1D500A-030 is reportedly available in a BBTIV package.

External Resources

Properties and Attributes

Forward Current Transfer Ratio hFE
500 β
Maximum Collector Current Ic
500 A
Maximum Power Dissipation Pc
2500 W
Polarity Pol
NPN
Maximum Junction Temperature Tj
150 °C
Material of Transistor TranMat
Si
Maximum Collector-Base Voltage Vcb
400 V
Maximum Collector-Emitter Voltage Vce
400 V
Maximum Emitter-Base Voltage Veb
10 V