MJ11016G

Properties at a glance

  • ft
    4
    MHz
  • hFE
    200
    β
  • Ic
    30
    A
  • Pc
    200
    W
  • Pol
    NPN
  • Tj
    200
    °C
  • TranMat
    Si
  • Vcb
    120
    V
  • Vce
    120
    V
  • Veb
    5
    V

Find similar components to the MJ11016G by clicking the properties (above) that you want to match.

Component Package & Description

Part number MJ11016G is reportedly available in a TO-3 package.

External Resources

Properties and Attributes

Transition Frequency ft
4 MHz
Forward Current Transfer Ratio hFE
200 β
Maximum Collector Current Ic
30 A
Maximum Power Dissipation Pc
200 W
Polarity Pol
NPN
Maximum Junction Temperature Tj
200 °C
Material of Transistor TranMat
Si
Maximum Collector-Base Voltage Vcb
120 V
Maximum Collector-Emitter Voltage Vce
120 V
Maximum Emitter-Base Voltage Veb
5 V