AP01N40J

Properties at a glance

  • Cd
    11
    pF
  • CntlChType
    N
    channel
  • FETType
    MOSFET
  • Id
    0.5
    A
  • Pd
    17.4
    W
  • Rds
    160
    Ω
  • Tj
    150
    °C
  • tr
    12
    ns
  • Vds
    400
    V
  • Vgs
    20
    V
  • Vgs(th)
    3
    V

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Component Package & Description

Part number AP01N40J is reportedly available in a TO-251 package.

External Resources

Properties and Attributes

Drain-Source Capacitance Cd
11 pF
Type of Control Channel CntlChType
N channel
FET Type FETType
MOSFET
Maximum Drain Current Id
0.5 A
Maximum Power Dissipation Pd
17.4 W
Maximum Drain-Source on-State Resistance Rds
160 Ω
Maximum Junction Temperature Tj
150 °C
Rise Time tr
12 ns
Maximum Drain-Source Voltage Vds
400 V
Maximum Gate-Source Voltage Vgs
20 V
Maximum Gate-Threshold Voltage Vgs(th)
3 V