RT1P144C

Properties at a glance

  • BiBR
    10000
    Ω R1
    47000
    Ω R2
  • BiBR1
    10 kOhm
  • BiBR2
    47 kOhm
  • ft
    150
    MHz
  • hFE
    50
    β
  • Ic
    0.1
    A
  • Pc
    0.2
    W
  • Pol
    PNP (pre-biased)
  • Tj
    150
    °C
  • TranMat
    Si
  • TRR1/2
    0.21
  • Vcb
    50
    V
  • Vce
    50
    V
  • Veb
    6
    V

Find similar components to the RT1P144C by clicking the properties (above) that you want to match.

Component Package & Description

Part number RT1P144C is reportedly available in a SC-59 package.

External Resources

Properties and Attributes

Built In Bias Resistor BiBR
R1 10000 Ω
R2 47000 Ω
BiBR1
10 kOhm
BiBR2
47 kOhm
Transition Frequency ft
150 MHz
Forward Current Transfer Ratio hFE
50 β
Maximum Collector Current Ic
0.1 A
Maximum Power Dissipation Pc
0.2 W
Polarity Pol
PNP (pre-biased)
Maximum Junction Temperature Tj
150 °C
Material of Transistor TranMat
Si
Typical Resistor Ratio R1/R2 TRR1/2
0.21
Maximum Collector-Base Voltage Vcb
50 V
Maximum Collector-Emitter Voltage Vce
50 V
Maximum Emitter-Base Voltage Veb
6 V