CSD30N70

Properties at a glance

  • Cd
    195
    pF
  • CntlChType
    N
    channel
  • FETType
    MOSFET
  • Id
    55
    A
  • Pd
    60
    W
  • Qg
    35
    Nc
  • Rds
    0.009
    Ω
  • Tj
    175
    °C
  • tr
    26
    ns
  • Vds
    30
    V
  • Vgs
    20
    V
  • Vgs(th)
    2.5
    V

Find similar components to the CSD30N70 by clicking the properties (above) that you want to match.

Component Package & Description

Part number CSD30N70 is reportedly available in a TO-252 package.

External Resources

Properties and Attributes

Drain-Source Capacitance Cd
195 pF
Type of Control Channel CntlChType
N channel
FET Type FETType
MOSFET
Maximum Drain Current Id
55 A
Maximum Power Dissipation Pd
60 W
Total Gate Charge Qg
35 Nc
Maximum Drain-Source on-State Resistance Rds
0.009 Ω
Maximum Junction Temperature Tj
175 °C
Rise Time tr
26 ns
Maximum Drain-Source Voltage Vds
30 V
Maximum Gate-Source Voltage Vgs
20 V
Maximum Gate-Threshold Voltage Vgs(th)
2.5 V