GES5088

Properties at a glance

  • Cc
    4
    pF
  • ft
    50
    MHz
  • hFE
    300
    β
  • Ic
    0.05
    A
  • Pc
    0.31
    W
  • Pol
    NPN
  • Tj
    150
    °C
  • TranMat
    Si
  • Vcb
    35
    V
  • Vce
    30
    V
  • Veb
    3
    V

Find similar components to the GES5088 by clicking the properties (above) that you want to match.

Component Package & Description

Part number GES5088 is reportedly available in a TO-236 package.

External Resources

Properties and Attributes

Collector Capacity Cc
4 pF
Transition Frequency ft
50 MHz
Forward Current Transfer Ratio hFE
300 β
Maximum Collector Current Ic
0.05 A
Maximum Power Dissipation Pc
0.31 W
Polarity Pol
NPN
Maximum Junction Temperature Tj
150 °C
Material of Transistor TranMat
Si
Maximum Collector-Base Voltage Vcb
35 V
Maximum Collector-Emitter Voltage Vce
30 V
Maximum Emitter-Base Voltage Veb
3 V