1H10

Properties at a glance

  • Cd
    44
    pF
  • CntlChType
    N
    channel
  • FETType
    MOSFET
  • Id
    8
    A
  • Pd
    4.5
    W
  • Qg
    13.4
    Nc
  • Rds
    0.135
    Ω
  • Tj
    175
    °C
  • tr
    12
    ns
  • Vds
    100
    V
  • Vgs
    20
    V
  • Vgs(th)
    2
    V

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Component Package & Description

Part number 1H10 is reportedly available in a SOT89 package.

External Resources

Properties and Attributes

Drain-Source Capacitance Cd
44 pF
Type of Control Channel CntlChType
N channel
FET Type FETType
MOSFET
Maximum Drain Current Id
8 A
Maximum Power Dissipation Pd
4.5 W
Total Gate Charge Qg
13.4 Nc
Maximum Drain-Source on-State Resistance Rds
0.135 Ω
Maximum Junction Temperature Tj
175 °C
Rise Time tr
12 ns
Maximum Drain-Source Voltage Vds
100 V
Maximum Gate-Source Voltage Vgs
20 V
Maximum Gate-Threshold Voltage Vgs(th)
2 V