PSMN4R6-60PS

Properties at a glance

  • CntlChType
    N
    channel
  • FETType
    MOSFET
  • Id
    100
    A
  • Pd
    211
    W
  • Qg
    70.8
    Nc
  • Rds
    0.0046
    Ω
  • Tj
    175
    °C
  • Vds
    60
    V
  • Vgs
    20
    V
  • Vgs(th)
    4
    V

Find similar components to the PSMN4R6-60PS by clicking the properties (above) that you want to match.

Component Package & Description

Part number PSMN4R6-60PS is reportedly available in a TO-220AB package.

External Resources

Properties and Attributes

Type of Control Channel CntlChType
N channel
FET Type FETType
MOSFET
Maximum Drain Current Id
100 A
Maximum Power Dissipation Pd
211 W
Total Gate Charge Qg
70.8 Nc
Maximum Drain-Source on-State Resistance Rds
0.0046 Ω
Maximum Junction Temperature Tj
175 °C
Maximum Drain-Source Voltage Vds
60 V
Maximum Gate-Source Voltage Vgs
20 V
Maximum Gate-Threshold Voltage Vgs(th)
4 V