3DG8

Properties at a glance

  • ft
    150
    MHz
  • hFE
    25
    β
  • Ic
    0.03
    A
  • Pc
    0.2
    W
  • Pol
    NPN
  • Tj
    175
    °C
  • TranMat
    Si
  • Vcb
    15
    V
  • Vce
    15
    V
  • Veb
    4
    V

Find similar components to the 3DG8 by clicking the properties (above) that you want to match.

Component Package & Description

Part number 3DG8 is reportedly available in TO-92, SOT23, or TO-18 packages.

External Resources

Properties and Attributes

Transition Frequency ft
150 MHz
Forward Current Transfer Ratio hFE
25 β
Maximum Collector Current Ic
0.03 A
Maximum Power Dissipation Pc
0.2 W
Polarity Pol
NPN
Maximum Junction Temperature Tj
175 °C
Material of Transistor TranMat
Si
Maximum Collector-Base Voltage Vcb
15 V
Maximum Collector-Emitter Voltage Vce
15 V
Maximum Emitter-Base Voltage Veb
4 V