MG6330-R

Properties at a glance

  • Cc
    250
    pF
  • ft
    60
    MHz
  • hFE
    70
    β
  • Ic
    15
    A
  • Pc
    200
    W
  • Pol
    NPN
  • Tj
    150
    °C
  • TranMat
    Si
  • Vcb
    260
    V
  • Vce
    260
    V
  • Veb
    5
    V

Find similar components to the MG6330-R by clicking the properties (above) that you want to match.

Component Package & Description

Part number MG6330-R is reportedly available in a TO-3P package.

External Resources

Properties and Attributes

Collector Capacity Cc
250 pF
Transition Frequency ft
60 MHz
Forward Current Transfer Ratio hFE
70 β
Maximum Collector Current Ic
15 A
Maximum Power Dissipation Pc
200 W
Polarity Pol
NPN
Maximum Junction Temperature Tj
150 °C
Material of Transistor TranMat
Si
Maximum Collector-Base Voltage Vcb
260 V
Maximum Collector-Emitter Voltage Vce
260 V
Maximum Emitter-Base Voltage Veb
5 V