2SC1983

Properties at a glance

  • hFE
    500
    β
  • Ic
    3
    A
  • Pc
    30
    W
  • Pol
    NPN
  • Tj
    150
    °C
  • TranMat
    Si
  • Vcb
    80
    V
  • Vce
    60
    V
  • Veb
    6
    V

Find similar components to the 2SC1983 by clicking the properties (above) that you want to match.

Component Package & Description

Part number 2SC1983 is reportedly available in a TO-220 package.

External Resources

Properties and Attributes

Forward Current Transfer Ratio hFE
500 β
Maximum Collector Current Ic
3 A
Maximum Power Dissipation Pc
30 W
Polarity Pol
NPN
Maximum Junction Temperature Tj
150 °C
Material of Transistor TranMat
Si
Maximum Collector-Base Voltage Vcb
80 V
Maximum Collector-Emitter Voltage Vce
60 V
Maximum Emitter-Base Voltage Veb
6 V