P2003BEA

Properties at a glance

  • Cd
    169
    pF
  • CntlChType
    N
    channel
  • FETType
    MOSFET
  • Id
    28
    A
  • Pd
    25
    W
  • Qg
    10
    Nc
  • Rds
    0.02
    Ω
  • Tj
    150
    °C
  • tr
    4
    ns
  • Vds
    30
    V
  • Vgs
    20
    V
  • Vgs(th)
    2.5
    V

Find similar components to the P2003BEA by clicking the properties (above) that you want to match.

Component Package & Description

Part number P2003BEA is reportedly available in a PDFN3X3S package.

External Resources

Properties and Attributes

Drain-Source Capacitance Cd
169 pF
Type of Control Channel CntlChType
N channel
FET Type FETType
MOSFET
Maximum Drain Current Id
28 A
Maximum Power Dissipation Pd
25 W
Total Gate Charge Qg
10 Nc
Maximum Drain-Source on-State Resistance Rds
0.02 Ω
Maximum Junction Temperature Tj
150 °C
Rise Time tr
4 ns
Maximum Drain-Source Voltage Vds
30 V
Maximum Gate-Source Voltage Vgs
20 V
Maximum Gate-Threshold Voltage Vgs(th)
2.5 V