2N6412

Properties at a glance

  • Cc
    50
    pF
  • ft
    50
    MHz
  • hFE
    40
    β
  • Ic
    4
    A
  • Pc
    15
    W
  • Pol
    NPN
  • Tj
    150
    °C
  • TranMat
    Si
  • Vcb
    60
    V
  • Vce
    40
    V
  • Veb
    6
    V

Find similar components to the 2N6412 by clicking the properties (above) that you want to match.

Component Package & Description

Part number 2N6412 is reportedly available in a X104-1 package.

External Resources

Properties and Attributes

Collector Capacity Cc
50 pF
Transition Frequency ft
50 MHz
Forward Current Transfer Ratio hFE
40 β
Maximum Collector Current Ic
4 A
Maximum Power Dissipation Pc
15 W
Polarity Pol
NPN
Maximum Junction Temperature Tj
150 °C
Material of Transistor TranMat
Si
Maximum Collector-Base Voltage Vcb
60 V
Maximum Collector-Emitter Voltage Vce
40 V
Maximum Emitter-Base Voltage Veb
6 V