1MBH50D-060

Properties at a glance

  • Cc
    650
    pF
  • Ic
    82
    A
  • IGBTChType
    N
    channel
  • Pc
    310
    W
  • Tj
    150
    °C
  • tr
    600
    ns
  • Type
    IGBT + Anti-Parallel Diode
  • Vce
    600
    V
  • VCE(sat)
    3
    V
  • Vge
    20
    V
  • VGE(th)
    8.5
    V

Find similar components to the 1MBH50D-060 by clicking the properties (above) that you want to match.

Component Package & Description

Part number 1MBH50D-060 is reportedly available in a TO-3PL package.

External Resources

Properties and Attributes

Collector Capacity Cc
650 pF
Maximum Collector Current Ic
82 A
Type of IGBT Channel IGBTChType
N channel
Maximum Power Dissipation Pc
310 W
Maximum Junction Temperature Tj
150 °C
Rise Time tr
600 ns
Component Type Type
IGBT + Anti-Parallel Diode
Maximum Collector-Emitter Voltage Vce
600 V
Collector-Emitter Saturation Voltage (typical) VCE(sat)
3 V
Maximum Gate-Emitter Voltage Vge
20 V
Maximum G-E Threshold Voltage VGE(th)
8.5 V