FNK30H150

Properties at a glance

  • Cd
    1300
    pF
  • CntlChType
    N
    channel
  • FETType
    MOSFET
  • Id
    100
    A
  • Pd
    110
    W
  • Qg
    100
    Nc
  • Rds
    0.0055
    Ω
  • Tj
    175
    °C
  • tr
    160
    ns
  • Vds
    30
    V
  • Vgs
    20
    V
  • Vgs(th)
    3
    V

Find similar components to the FNK30H150 by clicking the properties (above) that you want to match.

Component Package & Description

Part number FNK30H150 is reportedly available in a TO-220 package.

External Resources

Properties and Attributes

Drain-Source Capacitance Cd
1300 pF
Type of Control Channel CntlChType
N channel
FET Type FETType
MOSFET
Maximum Drain Current Id
100 A
Maximum Power Dissipation Pd
110 W
Total Gate Charge Qg
100 Nc
Maximum Drain-Source on-State Resistance Rds
0.0055 Ω
Maximum Junction Temperature Tj
175 °C
Rise Time tr
160 ns
Maximum Drain-Source Voltage Vds
30 V
Maximum Gate-Source Voltage Vgs
20 V
Maximum Gate-Threshold Voltage Vgs(th)
3 V