2SD227O

Properties at a glance

  • ft
    120
    MHz
  • hFE
    70
    β
  • Ic
    0.3
    A
  • Pc
    0.4
    W
  • Pol
    NPN
  • Tj
    150
    °C
  • TranMat
    Si
  • Vcb
    30
    V
  • Vce
    25
    V
  • Veb
    5
    V

Find similar components to the 2SD227O by clicking the properties (above) that you want to match.

Component Package & Description

Part number 2SD227O is reportedly available in a TO-92 package.

External Resources

Properties and Attributes

Transition Frequency ft
120 MHz
Forward Current Transfer Ratio hFE
70 β
Maximum Collector Current Ic
0.3 A
Maximum Power Dissipation Pc
0.4 W
Polarity Pol
NPN
Maximum Junction Temperature Tj
150 °C
Material of Transistor TranMat
Si
Maximum Collector-Base Voltage Vcb
30 V
Maximum Collector-Emitter Voltage Vce
25 V
Maximum Emitter-Base Voltage Veb
5 V